? semiconductor components industries, llc, 2006 january, 2006 ? rev. 0 1 publication order number: njl21193/d NJL21193DG (pnp), njl21194dg (npn) complementary thermaltrak ? transistors the thermaltrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. they can also be used in other applications as transistor die protection devices. features ? thermally matched bias diode ? instant thermal bias tracking ? absolute thermal integrity ? medium frequency device with extended safe operating area ? these are pb?free devices benefits ? eliminates thermal equilibrium lag time and bias trimming ? superior sound quality through improved dynamic temperature response ? significantly improved bias stability ? simplified assembly ? reduced labor costs ? reduced component count ? high reliability applications ? high?end consumer audio products ? home amplifiers ? home receivers ? professional audio amplifiers ? theater and stadium sound systems ? public address systems (pas) *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to?264, 5 lead case 340aa style 1 marking diagram http://onsemi.com xxxx = specific device code g = pb?free device a = assembly location yy = year ww = work week njlxxxxdg ayyww thermaltrak schematic bipolar power transistors 16 a, 250 v, 200 w see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information
NJL21193DG (pnp), njl21194dg (npn) http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector?emitter voltage v ceo 250 vdc collector?base voltage v cbo 400 vdc emitter?base voltage v ebo 5 vdc collector?emitter voltage ? 1.5 v v cex 400 vdc collector current ? continuous ? peak (note 1) i c 16 30 adc base current ? continuous i b 5.0 adc total power dissipation @ t c = 25 c derate above 25 c p d 200 1.43 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c dc blocking voltage v r 200 v average rectified forward current i f(av) 1.0 a thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 0.625 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. 1. pulse test: pulse width = 5 ms, duty cycle < 10%. attributes characteristic value esd protection human body model machine model >8000 v > 400 v flammability rating ul 94 v?0 @ 0.125 in ordering information device package shipping NJL21193DG to?264 (pb?free) 25 units / rail njl21194dg to?264 (pb?free) 25 units / rail
NJL21193DG (pnp), njl21194dg (npn) http://onsemi.com 3 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (i c = 100 madc, i b = 0) v ceo(sus) 250 ? vdc collector cutoff current (v ce = 200 vdc, i b = 0) i ceo ? 100 adc emitter cutoff current (v ce = 5 vdc, i c = 0) i ebo ? 100 adc collector cutoff current (v ce = 250 vdc, v be(off) = 1.5 vdc) i cex ? 100 adc second breakdown second breakdown collector current with base forward biased (v ce = 50 vdc, t = 1 s (non?repetitive) (v ce = 80 vdc, t = 1 s (non?repetitive) i s/b 4.0 2.25 ? ? adc on characteristics dc current gain (i c = 8 adc, v ce = 5 vdc) (i c = 16 adc, i b = 5 adc) h fe 25 8 75 ? base?emitter on voltage (i c = 8 adc, v ce = 5 vdc) v be(on) ? 2.2 vdc collector?emitter saturation voltage (i c = 8 adc, i b = 0.8 adc) (i c = 16 adc, i b = 3.2 adc) v ce(sat) ? ? 1.4 4 vdc dynamic characteristics total harmonic distortion at the output v rms = 28.3 v, f = 1 khz, p load = 100 w rms h fe unmatched (matched pair h fe = 50 @ 5 a/5 v) h fe matched t hd ? ? ? ? % current gain bandwidth product (i c = 1 adc, v ce = 10 vdc, f test = 1 mhz) f t 4 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob ? 500 pf maximum instantaneous forward voltage (note 2) (i f = 1.0 a, t j = 25 c) (i f = 1.0 a, t j = 150 c) v f 1.1 0.93 v maximum instantaneous reverse current (note 2) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 150 c) i r 10 100 a maximum reverse recovery time (i f = 1.0 a, di/dt = 50 a/ s) t rr 100 ns 2. diode pulse test: pulse width = 300 s, duty cycle 2.0%. i c collector current (amps) figure 1. typical current gain bandwidth product figure 2. typical current gain bandwidth product f, current gain bandwidth product (mhz) t pnp njl21193 f, current gain bandwidth product (mhz) t npn njl21194 i c collector current (amps) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 1.0 10 0.1 8.0 7.0 6.0 5.0 4.0 3.0 2.0 0 1.0 10 0.1 1.0 v ce = 10 v 5 v t j = 25 c f test = 1 mhz 10 v v ce = 5 v t j = 25 c f test = 1 mhz
NJL21193DG (pnp), njl21194dg (npn) http://onsemi.com 4 figure 3. dc current gain, v ce = 20 v figure 4. dc current gain, v ce = 20 v figure 5. dc current gain, v ce = 5 v figure 6. dc current gain, v ce = 5 v h fe , dc current gain i c collector current (amps) i c collector current (amps) h fe , dc current gain h fe , dc current gain i c collector current (amps) i c collector current (amps) v ce , collector?emitter voltage (volts) figure 7. typical output characteristics i c , collector current (a) v ce , collector?emitter voltage (volts) figure 8. typical output characteristics i c , collector current (a) pnp njl21193 npn njl21194 h fe , dc current gain typical characteristics pnp njl21193 pnp njl21193 npn njl21194 npn njl21194 1000 100 10 100 10 1.0 0.1 1000 100 10 100 10 1.0 0.1 1000 100 10 100 10 1.0 0.1 1000 100 10 100 10 1.0 0.1 30 0 25 20 15 10 5.0 0 5.0 10 15 20 25 35 0 30 25 20 15 5.0 0 5.0 10 15 20 25 10 v ce = 20 v t j = 100 c 25 c ?25 c v ce = 20 v t j = 100 c 25 c ?25 c t j = 100 c 25 c ?25 c v ce = 5 v t j = 100 c 25 c ?25 c v ce = 20 v t j = 25 c t j = 25 c 1.5 a i b = 2 a 1 a 0.5 a i b = 2 a 1.5 a 1 a 0.5 a
NJL21193DG (pnp), njl21194dg (npn) http://onsemi.com 5 v be(on) , base?emitter voltage (volts) figure 9. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 10. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 11. typical base?emitter voltage i c , collector current (amps) figure 12. typical base?emitter voltage i c , collector current (amps) v be(on) , base?emitter voltage (volts) pnp njl21193 npn njl21194 typical characteristics pnp njl21193 npn njl21194 3.0 2.5 2.0 1.5 1.0 0.5 0 100 10 1.0 0.1 1.4 100 10 1.0 0.1 1.2 1.0 0.8 0.6 0.4 0.2 0 10 100 10 1.0 0.1 1.0 0.1 10 100 10 1.0 0.1 1.0 0.1 t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed)
NJL21193DG (pnp), njl21194dg (npn) http://onsemi.com 6 1 0.01 80 60 40 20 200 v r , reverse voltage (volts) v f , voltage (volts) figure 13. typical reverse current figure 14. typical forward voltage 0.0001 0.1 10 0 i r , reverse current ( a) 0.7 0.6 0.5 0.4 0.8 0.001 10 0.3 1 0.1 1 0.9 i f , forward current (a) t j = ?25 c t j = 100 c t j = 25 c ?25 c 100 c 25 c 100 120 1 .1 140 160 180 0.001 0.01 there are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. safe operating area curves indicate i c ? v ce lim- its of the transistor that must be observed for reliable opera- tion; i.e., the transistor must not be subjected to greater dis- sipation than the curves indicate. the data of figure 15 is based on t j(pk) = 150 c; t c is vari- able depending on conditions. at high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second break- down. figure 15. active region safe operating area v ce , collector?emitter voltage (volts) i c , collector current (amps) 100 1.0 10 100 1000 10 1.0 0.1 1 sec
NJL21193DG (pnp), njl21194dg (npn) http://onsemi.com 7 figure 16. njl21193 typical capacitance v r , reverse voltage (volts) c, capacitance (pf) figure 17. njl21194 typical capacitance v r , reverse voltage (volts) c, capacitance (pf) audio precision model one plus total harmonic distortion analyzer source amplifier 50 0.5 0.5 8.0 ?50 v dut dut +50 v figure 18. typical total harmonic distortion figure 19. total harmonic distortion test circuit frequency (hz) t hd , total harmonic distortion (%) 10000 1000 100 100 10 1.0 0.1 10000 1000 100 100 10 1.0 0.1 1.2 1.1 1.0 0.9 0.8 0.7 0.6 100000 10000 1000 100 10 t c = 25 c c ob c ib t c = 25 c c ib c ob f (test) = 1 mhz) f (test) = 1 mhz)
NJL21193DG (pnp), njl21194dg (npn) http://onsemi.com 8 package dimensions to?264, 5 lead case 340aa?01 issue o notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 0.25 (0.010) m tb m j r h n u l p a k c e f d g 5 pl 5 pl 0.25 (0.010) m tb s 12 3 ?b? q ?t? 45 m y dim min nom max millimeters a 25.857 25.984 26.111 b 19.761 19.888 20.015 c 4.928 5.055 5.182 d 1.219 bsc e 2.032 2.108 2.184 f g 3.81 bsc h 2.667 2.718 2.769 j 0.584 bsc k 20.422 20.549 20.676 l 11.28 ref m n 4.57 ref p 2.259 2.386 2.513 q 3.480 bsc r 2.54 ref s u 6.17 ref w min nom max inches 1.018 1.023 1.028 0.778 0.783 0.788 0.194 0.199 0.204 0.0480 bsc 0.0800 0.0830 0.0860 0.0780 bsc 0.150 bsc 0.1050 0.1070 0.1090 0.0230 bsc 0.804 0.809 0.814 0.444 ref 0.180 ref 0.0889 0.0939 0.0989 0.1370 bsc 0.100 ref 0.243 ref 1.981 bsc 0 ??? ??? 7 0 7 0 ??? ??? 8 0 8 0 ??? ??? 6 0 6 s w s w y 2.388 bsc 0.0940 bsc style 1: pin 1. base 2. emitter 3. collector 4. anode 5. cathode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 njl21193/d thermaltrak is a trademark of semiconductor components industries, llc (scillc). literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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